SAS DISABLE plus 5V eFUSE WITH INTEGRATED ISOFET

文件：671.92 Kbytes 页数：12 Pages

DIODES

美台半导体

SAS DISABLE plus 5V eFUSE WITH INTEGRATED ISOFET

文件：671.92 Kbytes 页数：12 Pages

DIODES

美台半导体

SAS Disable +5V Efuse With Integrated Isofet

The eFuse is a 5V protection device with a bidirectional switch that incorporates input slew rate control to reduce input surge current and reverse current detection to prevent discharge to VCC from VOUT. The eFuse protection features include undervoltage lockout, a fixed 2.5A current limit, trimmed

Diodes

美台半导体

Sas Disable +5V Efuse With Integrated Isofet

The eFuse is a +5V protection device with a bidirectional switch that incorporates input slew rate control to reduce input surge current and reverse current detection to prevent discharge to Vcc from Vout. The eFuse protection features include under voltage lockout, a fixed 2.5A current limit, trimm Operating Input Voltage: 3.6V to 12V\nIntegrated NMOS Power Device with RDS(ON) of 50mΩ Typical\nInternal Current Limit - No External Current Sense Resistor in Load Path\nIntegrated ISOFET for reverse current protection\nUndervoltage Lockout\nOvervoltage Clamp & Over Current Protection\nThermal Shut;

Diodes

美台半导体

Package：12-WFQFN 裸露焊盘；包装：卷带（TR） 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR SWITCH N-CHAN 1:1 12WQFN

DIODES

美台半导体