16V N+N-Channel Enhancement Mode MOSFET

APM

永源微

Plastic-Encapsulate MOSFETS

DESCRIPTION DS(ON) The BCL8810KDW uses advanced trench technology to provide excellent R and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.

文件：1.21436 Mbytes 页数：4 Pages

GWSEMI

唯圣电子

N-channel Double MOSFET in a SOT23-6 Plastic Package

文件：1.43691 Mbytes 页数：9 Pages

FOSHAN

蓝箭电子

SOT-23 Plastic-Encapsulate MOSFETS

文件：933.04 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品