20V N+N-Channel Enhancement Mode MOSFET

APM

永源微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 16A, RDS(ON) = 6.2mΩ @VGS = 10V. RDS(ON) = 9 mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：405.72 Kbytes 页数：4 Pages

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.33448 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 15.5 Ampere FEATURE ​​​​​​​* Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applicatio

文件：296.95 Kbytes 页数：3 Pages

CHENMKO

力勤