场效应管

The AP8803CS is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and\n\nload switch applications. The meet the RoHS and\n\nProduct requirement with full function reliability approved. • VDS = 12V IS = 13.5A\n• RSS(ON) ≤ 3.2mΩ @ VGS=4.5V RSS(ON) ≤ 6.6mΩ @ VGS=2.5V 2KV ESD HBM;

APM

永源微

10/15 CH PLL

文件：109.97 Kbytes 页数：9 Pages

SAMSUNG

三星

10/15 CH PLL

文件：109.97 Kbytes 页数：9 Pages

SAMSUNG

三星

LIGHT EMITTING DIODE DRIVER

DESCRIPTION The block Diagram of the SA8803 is shown in Fig. 1. A control word is clocked into the device via the DATA pin with a local clock provided to pin CLK. The control word comprises a 3-bit chip address, a 5-bit LED address and a Status (on/off) bit. Provided that the Chip Adress matches

文件：84.54 Kbytes 页数：10 Pages

SAMES