丝印：AP6N90T；Package：TO-263-3L；900VN-ChannelEnhancementModeMOSFET

Features - VDS = 900V ID =6.0A - RDS(ON)

文件：861.98 Kbytes 页数：9 Pages

APME

永源微电子

900V N-Channel MOSFET

Features • 4.5A, 900V, RDS(on) = 1.9Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 17 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：772.09 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：596.44 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：777.83 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体