Simple Drive Requirement, Low Gate Charge

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited fo

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A-POWER

富鼎先进电子

Simple Drive Requirement, Low Gate Charge

APEC

富鼎先进

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE70T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converte

文件：241.77 Kbytes 页数：4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：229.95 Kbytes 页数：4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：266.58 Kbytes 页数：4 Pages

GTM

勤益投资控股