P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Included Schottky Diode

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A-POWER

富鼎先进电子

P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

APEC

富鼎先进

Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz

文件：127.39 Kbytes 页数：3 Pages

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Dual-Channel Low Noise Amplifier 14GHz – 17GHz

Features ■ Frequency: 14GHz - 17GHz ■ Gain: 19.5 dB ■ Noise figure: 1.5dB ■ Output P1dB: -1.5dBm ■ Power consumption: 16mW/ch ■ Channel isolation: 35dB ■ Supply voltage: 0.9V - 1.0V ■ Common bias control input ■ Compact size for planar integration on λ/2 grid ■ 2.7 × 2.7 × 0.9 mm, 23-pin

文件：1.45427 Mbytes 页数：15 Pages

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瑞萨

Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz

文件：127.39 Kbytes 页数：3 Pages

RENESAS

瑞萨