AP6923O

P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼LowOn-Resistance ▼FastSwitchingCharacteristic ▼IncludedSchottkyDiode

F6923

Dual-ChannelLowNoiseAmplifier14GHz–17GHz

Features ■Frequency:14GHz-17GHz ■Gain:19.5dB ■Noisefigure:1.5dB ■OutputP1dB:-1.5dBm ■Powerconsumption:16mW/ch ■Channelisolation:35dB ■Supplyvoltage:0.9V-1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7×0.9mm,23-pin

F6923

Dual-ChannelLowNoiseAmplifier13.75??17.3GHz

F6923AVRI

Dual-ChannelLowNoiseAmplifier13.75??17.3GHz

F6923AVRI

Dual-ChannelLowNoiseAmplifier14GHz–17GHz

Features ■Frequency:14GHz-17GHz ■Gain:19.5dB ■Noisefigure:1.5dB ■OutputP1dB:-1.5dBm ■Powerconsumption:16mW/ch ■Channelisolation:35dB ■Supplyvoltage:0.9V-1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7×0.9mm,23-pin

F6923EVB

Dual-ChannelLowNoiseAmplifier14GHz–17GHz

Features ■Frequency:14GHz-17GHz ■Gain:19.5dB ■Noisefigure:1.5dB ■OutputP1dB:-1.5dBm ■Powerconsumption:16mW/ch ■Channelisolation:35dB ■Supplyvoltage:0.9V-1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7×0.9mm,23-pin

F6923EVB

Dual-ChannelLowNoiseAmplifier13.75??17.3GHz

FDW6923

P-Channel2.5VSpecifiedPowerTrench??MOSFETwithSchottkyDiode

FDW6923

P-Channel2.5VSpecifiedPowerTrenchMOSFETwithSchottkyDiode

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.ItiscombinedwithalowforwarddropSchottkydiodewhichisisolatedfromtheMOSFET,providingacompactpowersolutionforasynchronousDC/DCconverter

GTS6923

P-CHANNELWITHSCHOTTKYDIODEPOWERMOSFET