丝印：5000；Package：AP5N10DF；100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID = 5A - RDS(ON)

文件：2.11186 Mbytes 页数：7 Pages

APME

永源微电子

100V N-Channel Enhancement Mode MOSFET

APM

永源微

N-Channel Enhancement Mode Power MOSFET

文件：356.12 Kbytes 页数：10 Pages

CYSTEKEC

全宇昕科技

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：344.7 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel Enhancement Mode MOSFET

文件：405.63 Kbytes 页数：8 Pages

PANJIT

強茂