N-Channel Enhancement Mode MOSFET

APM

永源微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

文件：868.57 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 55A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：645.15 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel MOSFET uses advanced SGT technology

文件：1.7768 Mbytes 页数：5 Pages

DOINGTER

杜因特