AP5020

Flexible, Cloud-Managed, Premium-Tier Wi-Fi 7 Access Point

APFeatures Five-RadioDesign •2.4GHz(4x4:4) •5GHz(4x4:4) •6GHz(4x4:4) •IoTRadio •IoTRadio UnlikeotherAPsthatscanonlyparttime,theAP5020featuresadedicated2x2tri-frequencysensorthatmonitorsforroguedevicesfulltime,eliminatingtheriskofvulnerabilityand

AP5020-WW

Flexible, Cloud-Managed, Premium-Tier Wi-Fi 7 Access Point

APFeatures Five-RadioDesign •2.4GHz(4x4:4) •5GHz(4x4:4) •6GHz(4x4:4) •IoTRadio •IoTRadio UnlikeotherAPsthatscanonlyparttime,theAP5020featuresadedicated2x2tri-frequencysensorthatmonitorsforroguedevicesfulltime,eliminatingtheriskofvulnerabilityand

AP5020-WW-TAA

Flexible, Cloud-Managed, Premium-Tier Wi-Fi 7 Access Point

APFeatures Five-RadioDesign •2.4GHz(4x4:4) •5GHz(4x4:4) •6GHz(4x4:4) •IoTRadio •IoTRadio UnlikeotherAPsthatscanonlyparttime,theAP5020featuresadedicated2x2tri-frequencysensorthatmonitorsforroguedevicesfulltime,eliminatingtheriskofvulnerabilityand

APT5020

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody

APT5020

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitc

APT5020BLC

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI™optimizedgatelayout,deliversexceptionall

APT5020BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT5020BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

APT5020BNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

APT5020BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery