Flexible, Cloud-Managed, Premium-Tier Wi-Fi 7 Access Point

AP Features Five-Radio Design • 2.4 GHz (4x4:4) • 5 GHz (4x4:4) • 6 GHz (4x4:4) • IoT Radio • IoT Radio Unlike other APs that scan only part time, the AP5020 features a dedicated 2x2 tri-frequency sensor that monitors for rogue devices full time, eliminating the risk of vulnerability and

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EXTREMENETWORKS

Flexible, Cloud-Managed, Premium-Tier Wi-Fi 7 Access Point

AP Features Five-Radio Design • 2.4 GHz (4x4:4) • 5 GHz (4x4:4) • 6 GHz (4x4:4) • IoT Radio • IoT Radio Unlike other APs that scan only part time, the AP5020 features a dedicated 2x2 tri-frequency sensor that monitors for rogue devices full time, eliminating the risk of vulnerability and

文件：577.98 Kbytes 页数：16 Pages

EXTREMENETWORKS

Flexible, Cloud-Managed, Premium-Tier Wi-Fi 7 Access Point

AP Features Five-Radio Design • 2.4 GHz (4x4:4) • 5 GHz (4x4:4) • 6 GHz (4x4:4) • IoT Radio • IoT Radio Unlike other APs that scan only part time, the AP5020 features a dedicated 2x2 tri-frequency sensor that monitors for rogue devices full time, eliminating the risk of vulnerability and

文件：577.98 Kbytes 页数：16 Pages

EXTREMENETWORKS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switc

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VI™ optimized gate layout, delivers exceptionall

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