Simple Drive Requirement, Low On-resistance

文件：105.96 Kbytes 页数：11 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：105.96 Kbytes 页数：11 Pages

A-POWER

富鼎先进电子

Fast Switching Characteristic

文件：109.72 Kbytes 页数：12 Pages

A-POWER

富鼎先进电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =60mΩ(typ.) @ VGS = 4.5V • P-Channel -30V/-3.5A, RDS(ON) =85mΩ(typ.) @ VGS =-10V RDS(ON) =135mΩ(typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applic

文件：205.51 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =60mΩ(typ.) @ VGS = 4.5V • P-Channel -30V/-3.5A, RDS(ON) =85mΩ(typ.) @ VGS =-10V RDS(ON) =135mΩ(typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applic

文件：159.92 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =60mΩ(typ.) @ VGS = 4.5V • P-Channel -30V/-3.5A, RDS(ON) =85mΩ(typ.) @ VGS =-10V RDS(ON) =135mΩ(typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applic

文件：159.92 Kbytes 页数：13 Pages

ANPEC

茂达电子