Lower Gate Charge, Simple Drive Requirement

文件：65.379 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：65.379 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Lower Gate Charge, Simple Drive Requirement

APEC

富鼎先进

N-Channel Enhancement Mode MOSFET

Features • 30V/4A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：148.69 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/4A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：117.47 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/4A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：148.69 Kbytes 页数：9 Pages

ANPEC

茂达电子