200V N-Channel Enhancement Mode MOSFET

APM

永源微

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.28611 Mbytes 页数：9 Pages

FOSHAN

蓝箭电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 200V, 40A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant

文件：531.53 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 200V, 40A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant

文件：531.53 Kbytes 页数：5 Pages

CET-MOS

华瑞