丝印：AP40；150mA Low Supply Current LDO REGULATOR

FEATURES • Supply Current Typ. 1.0μA (Except the current through CE pull down circuit) • Standby Current Typ. 0.1μA • Dropout Voltage

文件：1.26978 Mbytes 页数：36 Pages

NISSHINBO

日清纺微电子

丝印：AP4040Q；Package：PDFN3.3X3.3-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：701.14 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP4045AGU；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4045AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：794.7 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP4045GU；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：731.19 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP4075GU；Package：PDFN5x6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4075GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：692.7 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP4090AGU；Package：PDFN5x6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4090AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：592.6 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP40ND40AG；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40ND40AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：725.92 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP40ND40G；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40ND40G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：698.56 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP40ND60AG；Package：DFN5X6-8L；NCE N-Channel Super Trench Power MOSFET

Description The NCEAP40ND60AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：732.34 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP40ND80G；Package：DFN5x6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40ND80G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：681.52 Kbytes 页数：6 Pages

NCEPOWER

新洁能