丝印：AP3N80Y；Package：TO-251S-3L；800V N-Channel Enhancement Mode MOSFET

Features - VDS = 800V ID =3.0 - RDS(ON)

文件：1.26322 Mbytes 页数：8 Pages

APME

永源微电子

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：661.96 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFETS

文件：281.01 Kbytes 页数：5 Pages

SAMSUNG

三星

ADVANCED POWER MOSFET

文件：321.97 Kbytes 页数：6 Pages

SAMSUNG

三星