丝印：AP32N50LP；Package：TO-247S-3L；500V N-Channel Enhancement Mode MOSFET

Features - VDS=500V ID=32A - RDS(ON)

文件：744.47 Kbytes 页数：7 Pages

APME

永源微电子

Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

SMPS MOSFET Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Rugg

文件：94.5 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

SMPS MOSFET Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Rugg

文件：94.5 Kbytes 页数：8 Pages

IRF

HiPerFET Power MOSFETs

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrin

文件：110.19 Kbytes 页数：4 Pages

IXYS

艾赛斯