AP2602Y

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AUIRFP2602

HEXFET짰PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprov

AUIRFP2602

LowOn-Resistance

AUIRFP2602

AUTOMOTIVEGRADE

BFCQ-2602

BandpassFilter

BFCQ-2602+

BandpassFilter

DW2602

CONTENTS

ELP2602

Overview

Feature Integrateddualphotodiodearchitectureand VCSELIRemitterinonepackage Tiny1.5mmx1mmx0.35mmmodule Crosstalkandambientlightcancellation Integratefactorycalibrated940nmIRVCSEL Wideconfigurationrange VDDwideoperationrange1.7~2.0v 1.8VPowerSup

EMH2602

N-ChannelandP-ChannelSiliconMOSFETsGeneral-PurposeSwitchingDevice

General-PurposeSwitchingDeviceApplications Features •TheEMH2602incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •4Vdrive.

EVQP2602M

4.7mm
3.5mmSMDLightTouchSwitches

■Features ●Externaldimensions:4.7mmx3.5mm, Height:MiddlePushTravel2.5mm ShortPushTravel2.1mm,2.5mm ●Highoperatingforceandlongoperationallife ●HighmountabilitywithJ-bent(4terminals) ■RecommendedApplications ●Operationswitchesforpo