丝印：1N02；Package：DFN1.0X0.6-3L；20V N-Channel Enhancement Mode MOSFET

Features - VDS =20V ID =0.9A - RDS(ON)

文件：574.12 Kbytes 页数：7 Pages

APME

永源微电子

N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET

Part of the GreenLine™ Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management

文件：116.94 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high energ

文件：219.5 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

Power MOSFET

文件：303.04 Kbytes 页数：12 Pages

ONSEMI

安森美半导体