MOSFET

APM

永源微

N-CHANNEL MOSFET in a TO-220FL Plastic Package

文件：1.19356 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

650V N-Channel MOSFET

文件：881.49 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.44Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：346.7 Kbytes 页数：2 Pages

ISC

无锡固电