丝印：500；Package：8L；100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID =150A - RDS(ON)

文件：1.40229 Mbytes 页数：7 Pages

APME

永源微电子

N-Channel PowerTrench짰 MOSFET 100V, 57A, 15m廓

文件：526.37 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench짰 MOSFET100V, 57A, 15m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fa

文件：511.68 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon

文件：115.93 Kbytes 页数：4 Pages

IXYS

艾赛斯