N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：58.84 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：58.84 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：107.65 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

丝印：15TP1R0；Package：SO-8；P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：73.28 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

Small Footprint & Low Profile Package

文件：111.94 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：110.07 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

丝印：AP15T14；Package：TO-220-3L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The series of devices uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal fo

文件：407.79 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP15T14D；Package：TO-263-2L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The series of devices uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal fo

文件：700.44 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP15P10DXXXYYYY；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

文件：1.3487 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：AP15P10DXXXYYYY；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

文件：1.34872 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子