BD139

Complementarylowvoltagetransistor

Features ■Productsarepre-selectedinDCcurrentgain Application ■Generalpurpose Description Theseepitaxialplanartransistorsaremountedin theSOT-32plasticpackage.Theyaredesigned foraudioamplifiersanddriversutilizing complementaryorquasi-complementarycircuits.

BD139

TO-126Plastic-EncapsulateTransistors

FEATURES HighCurrent ComplementToBD136,BD138AndBD140

BD139

SILICONNPNEPITAXIALTYPE

FEATURES: .DesignedforComplementaryUsewithBD136,BD138 andBD140.

BD139

GERMANIOVETRANZISTORY

BD139A

NPNPOWERTRANSISTORS

FEATURES Highcurrent(max.1.5A) Lowvoltage(max.80V)

BD139G

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium−powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable •DCCurrentGain−hFE=40(Min)@

BD139G

PlasticMedium-PowerSiliconNPNTransistors

BD139T

NPNSiliconEpitaxialPowerTransistor

NPNSILICONEPITAXIALPOWERTRANSISTOR ThesedevicesaredesignedasAudioAmplifier andDriversUtilizing.

BD139-TU

TO-126Plastic-EncapsulateTransistors

FEATURES HighCurrent ComplementToBD136,BD138AndBD140

BL-BX139

BIGGERSIZELEDLAMPS(ROUNDTYPES)

BIGGERSIZELEDLAMPS(ROUNDTYPES)