900V N-Channel Enhancement Mode MOSFET

APM

永源微

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION · Switch mode power supply · DC-DC converters · AC motor control

文件：275.41 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

文件：85.99 Kbytes 页数：4 Pages

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯