40V N-Channel Enhancement Mode MOSFET

AP120N04P采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至1.8V的操作。该器件适用于负载开关或PWM应用。 VDS = 40V，ID = 80A \nRDS（ON）<4mΩ\n@ V GS = -2.5V RDS（ON）<7mΩ\n@ V GS = -4.5V 高功率和电流处理能力\n无铅产品\nTO-220大电流封装;

APM

永源微

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.18174 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

isc N-Channel MOSFET Transistor

Features ·Drain Current :ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC/DC converter ·Powertrain Management ·Solenoid and Motor Drivers

文件：336.72 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Power MOSFET

文件：923.87 Kbytes 页数：6 Pages

HMSEMI

华之美半导体