首页 >AP1009>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
3GHzMICROWAVERELAYSMiniaturesizeLineupincludes50/75廓type FEATURES 1.Superminiaturedesign 14×8.6×7.2mm.551×.339×.283inch (standardPCboardterminal) 2.Lineupincludessilenttype.(75Ωtypeonly) Operationnoise(Unit:dB) 3.Excellenthighfrequencycharacteristics 4.Lineupincludessurface-mountterminaltype E | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
SMALLMICROWAVERELAY | NAISNais(Matsushita Electric Works) 松下电器松下电器机电(中国)有限公司 | NAIS | ||
3GHzMICROWAVERELAYWITH60WCARRYINGPOWER | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
CONTACTAREA:GOLDPLATED5U | ASSMANN ASSMANN WSW COMPONENTS | ASSMANN | ||
SiliconN-ChannelMOSFETTetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage9V •Integratedstabilizedbiasnetwork | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
SiliconN-ChannelMOSFETTetrode(Forlownoise,highgaincontrolledinputstagesupto1GHzOperatingvoltage9VIntegratedbiasnetwork) SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage9V •Integratedbiasnetwork | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
SiliconN-ChannelMOSFETTetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstageupto1GHz •Operatingvoltage9V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconN-ChannelMOSFETTetrode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconN-ChannelMOSFETTetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstageupto1GHz •Operatingvoltage9V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconN-ChannelMOSFETTetrode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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