N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

文件：61.72 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

文件：61.72 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-220 package is universally preferred for all commercial industrial applications. The device is suited for DC-DC ,DC-AC converters for telecom, industrial and consumer environment. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requir

文件：60.29 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-Channel 650 V (D-S) MOSFET

文件：1.08589 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：103.96 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-Channel 650 V (D-S) MOSFET

文件：1.08593 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Fast Switching Characteristics

文件：100.39 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nThe TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications.Dynamic dv/dt Rating\nRepetitive Avalanche Rated\nFast Switching\nSimple Dr

APEC

富鼎先进

N-Channel Mosfet

AP01N60I采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至2.0V的操作。该器件适用于负载开关或PWM应用。 VDS = 600V，ID = 0.021A \nRDS（ON）<75mΩ\n@ V GS =10V RDS（ON）<100mΩ\n@ V GS = 4.5V 高功率和电流处理能力\n无铅产品\nSOT23表贴封装;

APM

永源微

Power MOSFETs

APEC

富鼎先进