丝印：AP016N60VD；Package：TO-263-7L；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP016N60VD uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

文件：697.2 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP016N85LL；Package：TOLL-8L；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal

文件：938.87 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：AP0178AK；Package：TO-252-2L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：553.56 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP018N60AGU；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP018N60AGU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal fo

文件：826.79 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP018N60GU；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP018N60GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

文件：819.83 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP018N85LL；Package：TOLL-8L；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP018N85LL uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

文件：600.13 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：AP01ND35AG；Package：DFN5X6-8L；NCE N-Channel Super Trench Power MOSFET

Description The NCEAP01ND35AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：588.47 Kbytes 页数：6 Pages

NCEPOWER

新洁能

Image Signal Processor, 1 MP

AP0100CS is a dedicated image co-processor that enables flexible camera platforms using high performance ON Semiconductor megapixel high dynamic range (HDR) sensors. The two-chip solution of sensor and co-processor allows for multiple camera price and performance points with re-use of circuit board • High Dynamic Range;

ONSEMI

安森美半导体

图像信号处理器，1 MP

AP0101AT 是一款专用的汽车图像协处理器，能够实现使用安森美半导体百万像素高动态范围 (HDR) 传感器的灵活摄像头平台。传感器和协处理器的双芯片解决方案可实现多种摄像头价格和性能点，能够重用电路板设计，进入市场快，实现设计灵活性。传感器性能由于减少了一个单独协处理器芯片的发热而得以提高，同时可实现高性能功能。AP0101AT 适用于汽车数字环视系统。它结合安森美半导体的 AR0132AT HDR 汽车传感器使用。 • High Dynamic Range;

ONSEMI

安森美半导体

Package：100-VFBGA；包装：托盘 功能：处理器 类别：集成电路（IC） 视频处理 描述：IC VID IMAGE SGNL PROC 100VFBGA

ONSEMI

安森美半导体