N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. ▼Simple Drive Re

文件：63.81 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement Lower Gate Charge

Description AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263

文件：56.58 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial industrial applications at power dissipation l

文件：78.93 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to ap

文件：222.79 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial industrial applications at power dissipation l

文件：78.93 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

Description AP09N90C provides minimize on-state resistance , superior switching performance and high efficiency switching power supply applications. TO-3P package is preferred for commercial-industrial applications and provides greater distance between pins to meet the requirements of most safe

文件：80.2 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AP09N90C provides minimize on-state resistance , superior switching performance and high efficiency switching power supply applications. TO-3P package is preferred for commercial-industrial applications and provides greater distance between pins to meet the requirements of most s

文件：65.84 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

MEMORY ORGANIZATION PROGRAM MEMORY: Up to 4 Kbytes of the program memory can reside on-chip (except 80C31BH). In addition the device can address up to 64K of program memory external to the chip. DATA MEMORY: This microcontroller has a 128 x 8 on-chip RAM. In addition it can address up to 64 Kb

文件：229.47 Kbytes 页数：16 Pages

Intel

英特尔

CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER

MEMORY ORGANIZATION PROGRAM MEMORY: Up to 4 Kbytes of the program memory can reside on-chip (except 80C31BH). In addition the device can address up to 64K of program memory external to the chip. DATA MEMORY: This microcontroller has a 128 x 8 on-chip RAM. In addition it can address up to 64 Kb

文件：229.47 Kbytes 页数：16 Pages

Intel

英特尔

AP10 VaiNet Wireless Access Point

Features • One AP10 supports up to 32 VaiNet data loggers • Powered by Power over Ethernet (PoE) or DC adapter • Minimal infrastructure and no signal amplifiers needed • Uses HTTPS communication and encryption to ensure secure data transmission • Chirp spread spectrum wireless modulatio

文件：190.31 Kbytes 页数：3 Pages

VAISALA

维萨拉