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NCEAP018N60AGU

Marking:AP018N60AGU;Package:DFN5X6-8L;NCE Automotive N-Channel Super Trench II Power MOSFET

Description TheNCEAP018N60AGUusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfo

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEAP018N60GU

Marking:AP018N60GU;Package:DFN5X6-8L;NCE Automotive N-Channel Super Trench II Power MOSFET

Description TheNCEAP018N60GUusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEAP018N85LL

Marking:AP018N85LL;Package:TOLL-8L;NCE Automotive N-Channel Super Trench II Power MOSFET

Description TheNCEAP018N85LLusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEAP01ND35AG

Marking:AP01ND35AG;Package:DFN5X6-8L;NCE N-Channel Super Trench Power MOSFET

Description TheNCEAP01ND35AGusesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealforhi

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEAP020N10LL

Marking:AP020N10LL;Package:TOLL-8L;NCE Automotive N-Channel Super Trench II Power MOSFET

Description TheseriesofdevicesusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisideal

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEAP020N60GU

Marking:AP020N60GU;Package:PDFN5X6-8;NCE Automotive N-Channel Super Trench II Power MOSFET

Description TheNCEAP020N60GUusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEAP020N85LL

Marking:AP020N85LL;Package:TOLL-8L;NCE Automotive N-Channel Super Trench II Power MOSFET

Description TheseriesofdevicesusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisideal

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEAP023N10LL

Marking:AP023N10LL;Package:TOLL-8L;NCE Automotive N-Channel Super Trench II Power MOSFET

Description TheseriesofdevicesusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisideal

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEAP025N60AG

Marking:AP025N60AG;Package:DFN5X6-8L;NCE Automotive N-Channel Super Trench II Power MOSFET

Description TheNCEAP025N60AGusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEAP026N10T

Marking:AP026N10T;Package:TO-247-3L;NCE Automotive N-Channel Super Trench II Power MOSFET

Description TheNCEAP026N10TusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

详细参数

  • 型号:

    AP

  • 制造商:

    BOPLA

  • 功能描述:

    Bulk

供应商型号品牌批号封装库存备注价格
恩XP
23+
SOD323
15000
全新原装现货,价格优势
询价
PANASONIC/松下
23+
11
6500
专注配单,只做原装进口现货
询价
PANASONIC/松下
23+
11
6500
专注配单,只做原装进口现货
询价
LAIRD
20+
射频元件
255
就找我吧!--邀您体验愉快问购元件!
询价
23+
QFP
16567
正品:QQ;2987726803
询价
MICROCHIP
25+
SMT
9600
原装正品长期现货
询价
24+
116
现货供应
询价
AEI
22+
NA
69
加我QQ或微信咨询更多详细信息,
询价
ON/安森美
20+
NA
20000
原装正品,优势订货
询价
DALLAS
22+
SOT23-3
30000
只做原装正品
询价
更多AP供应商 更新时间2025-6-20 16:55:00