APL3573AQBI-TRG

Marking：APL3573；Package：TQFN4x4-16C；USB Power-Distribution Switches

Features VINInputVoltageRange:4.5to25V 30VAbsoluteRatingsatVINPin 10AOutputCurrentCapability LowOnResistance AdjustableSoft-startTimebySSpin FastOverCurrentProtectionResponseTime InputUnderVoltageProtectionbyVINUVPPin. FaultReportonACOKPin. Bui

APL3573AQBI-TRL

Marking：APL3573；Package：TQFN4x4-16C；USB Power-Distribution Switches

Features VINInputVoltageRange:4.5to25V 30VAbsoluteRatingsatVINPin 10AOutputCurrentCapability LowOnResistance AdjustableSoft-startTimebySSpin FastOverCurrentProtectionResponseTime InputUnderVoltageProtectionbyVINUVPPin. FaultReportonACOKPin. Bui

APM4953

Marking：APM4953；Package：SOP-8；-30V P-Channel MOSFET

Features VDS(V)=-30V ID=-5.3A(VGS=10V) RDS(ON)

APM4953

Marking：APM4953；Package：SOP-8；-30V P-Channel MOSFET

Features VDS(V)=-30V ID=-5.3A(VGS=10V) RDS(ON)

APR34709SP-13

Marking：APR34709；Package：SO-8EP；SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

Features SynchronousRectificationforDCMOperationFlyback EliminateResonantRingInterference FastDetectorofSupplyVoltages FewestExternalComponents TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplications

APT13005DTF-G1

Marking：APT13005DTF-G1；Package：ITO220AB；450V NPN HIGH VOLTAGE POWER TRANSISTOR

Features BVCEO>450V BVCES>700V BVEBO>9V IC=4AHighCollectorCurrent IntegratedAnti-ParallelDiodetoactasfree-wheelingdiode Anti-Saturationfeature Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsr

APT13005DT-G1

Marking：APT13005DT-G1；Package：TO220AB；450V NPN HIGH VOLTAGE POWER TRANSISTOR

Features BVCEO>450V BVCES>700V BVEBO>9V IC=4AHighCollectorCurrent IntegratedAnti-ParallelDiodetoactasfree-wheelingdiode Anti-Saturationfeature Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsr

AUIRFR540Z

Marking：AP50N10D；Package：TO-252；N-Channel Enhancement Mode MOSFET

Description usesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=100VID=50A RDS(ON)

BFP520

Marking：APs；Package：SOT-343；NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Lownoiseamplifierdesignedforlowvoltageapplications,idealfor1.2Vor1.8Vsupplyvoltage •Commone.g.incordlessphones,satellitereceiversandoscillatorsupto22GHz •Highgainandlownoiseathighfrequenciesduetohightransitfrequ

CT220PMC-HS5

Marking：APY；Package：SOT23；XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput