600V, a MOS5 TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting,

文件：652.24 Kbytes 页数：6 Pages

AOSMD

万国半导体

高压MOSFET (500V - 1000V)

600V, aMOS5™ N-Channel Power Transistor

AOS

美国万代

600V a MOS5 TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, S

文件：612.98 Kbytes 页数：6 Pages

AOSMD

万国半导体

Isc N-Channel MOSFET Transistor

文件：343.84 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36mA)

文件：437.54 Kbytes 页数：10 Pages

TOSHIBA

东芝