首页 >AOTF15B60D>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
AOTF15B60D | 600V, 15A Alpha IGBT with Diode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | |
AOTF15B60D | 包装:管件 封装/外壳:TO-220-3 整包 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 30A 50W TO220F | Alpha \u0026 Omega Semiconductor Inc. Alpha \u0026 Omega Semiconductor Inc. | Alpha \u0026 Omega Semiconductor Inc. | |
600V, 15A Alpha IGBT TM with Diode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
包装:管件 封装/外壳:TO-220-3 整包 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 15A | Alpha \u0026 Omega Semiconductor Inc. Alpha \u0026 Omega Semiconductor Inc. | Alpha \u0026 Omega Semiconductor Inc. | ||
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V,15AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
ULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
产品属性
- 产品编号:
AOTF15B60D
- 制造商:
Alpha \u0026 Omega Semiconductor Inc.
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 系列:
Alpha IGBT™
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
1.8V @ 15V,15A
- 开关能量:
420µJ(开),110µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
21ns/73ns
- 测试条件:
400V,15A,20 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商器件封装:
TO-220F
- 描述:
IGBT 600V 30A 50W TO220F
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AO/万代 |
2021+ |
TO-220F |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
AOS/万代 |
24+ |
TO220F |
333888 |
专业直销原装AOS一系列可订货 |
询价 | ||
AO/万代 |
23+/24+ |
TO-220F |
9865 |
原装MOS管(场效应管). |
询价 | ||
AOS万代 |
2017+ |
TO-220F-3 |
25899 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
AOS |
2022+ |
TO-220F |
5000 |
只做原装公司现货 |
询价 | ||
AOS |
21+ |
TO-220F |
12588 |
原装正品 |
询价 | ||
23+ |
N/A |
49500 |
正品授权货源可靠 |
询价 | |||
AOS |
2019 |
TO-220F |
55000 |
原装正品现货假一赔十 |
询价 | ||
AOS美国万代 |
23+ |
TOTO-220F |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
AOS/万代 |
21+ |
65230 |
询价 |
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