N-Channel Enhancement Mode Field Effect Transistor

General Description SRFETTM AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. - RoHS Compliant.

文件：214.08 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=60A,RDS(ON)

文件：472.4 Kbytes 页数：4 Pages

DOINGTER

杜因特

30V N-Channel MOSFET

文件：301.6 Kbytes 页数：7 Pages

AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

General Description SRFETTM AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. - RoHS Compliant.

文件：214.08 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

文件：301.6 Kbytes 页数：7 Pages

AOSMD

万国半导体