30V N-Channel MOSFET

General Description The AON7430 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Features VDS (V) = 30V ID = 34A (VGS = 10V) RDS(ON)

文件：159.13 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET uses advanced trench technology

文件：613.41 Kbytes 页数：4 Pages

DOINGTER

杜因特

低压MOSFET (12V - 30V)

30V N-Channel MOSFET

AOS

美国万代

场效应管

HXY MOSFET

华轩阳电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ​​​​​​​ - RoHS Compliant - Halogen Free Features VDS (V) = 30V (VGS = 10V)

文件：145.76 Kbytes 页数：6 Pages

AOSMD

万国半导体