N-Channel Enhancement Mode Field Effect Transistor

General Description The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. Product Summary VDS 30V ID (at VGS=10V) 32A RDS(ON) (at VGS=

文件：256.16 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications.Product Summary\n  VDS                      30V\n  ID (at VGS=10V)      32A\n  RDS(ON) (at VGS=10V)

AOS

美国万代

MOSFET

MTW

美台微

30V N-Channel MOSFET

General Description The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 30V ID (at VGS=10V) 40A

文件：245.55 Kbytes 页数：6 Pages

AOSMD

万国半导体

RoHS and Halogen-Free Compliant

General Description • Low RDS(ON) • Optimized for Load Switch • High Current Capability • ESD Protected • RoHS and Halogen-Free Compliant Applications • Battery Charging & Discharging for NB Battery Pack Product Summary VDS 30V ID (at VGS=10V)

文件：260.04 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Control • Industrial • Load Switch • ORing

文件：1.76499 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

场效应管

HXY MOSFET

华轩阳电子

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 8SOIC

Alpha \u0026 Omega Semiconductor Inc.