丝印：AON；Package：3LdSOT-23；Precision Low Power FGA Voltage References

The ISL60002 FGA voltage references are very high precision analog voltage references fabricated using the Renesas proprietary Floating Gate Analog (FGA) technology and feature low supply voltage operation at ultra-low 350nA operating current. Features • Reference voltages . . . . . 1.024V, 1.2V

文件：2.35923 Mbytes 页数：40 Pages

RENESAS

瑞萨

丝印：AON；Package：3LdSOT-23；Precision Low Power FGA Voltage References

The ISL60002 FGA voltage references are very high precision analog voltage references fabricated using the Renesas proprietary Floating Gate Analog (FGA) technology and feature low supply voltage operation at ultra-low 350nA operating current. Features • Reference voltages . . . . . 1.024V, 1.2V

文件：2.35923 Mbytes 页数：40 Pages

RENESAS

瑞萨

丝印：2240；Package：DFN-62x2；40V N-Channel MOSFET

General Description The AON2240 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 40V ID (at VG

文件：296.41 Kbytes 页数：6 Pages

AOSMD

万国半导体

20V P-Channel MOSFET

General Description The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. Product Summary VDS -20V ID (at VGS=-4.5V) -0.7A RDS(ON) (at VGS =-4.5V)

文件：270.34 Kbytes 页数：5 Pages

AOSMD

万国半导体

20V N-Channel MOSFET

General Description The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. Product Summary VDS 20V ID (at VGS=4.5V) 0.7A RDS(ON) (at VGS =4.5V)

文件：242.23 Kbytes 页数：5 Pages

AOSMD

万国半导体

20V P-Channel MOSFET

General Description The AON1611 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Product Summary VDS -20V ID(at VGS=-

文件：226.15 Kbytes 页数：5 Pages

AOSMD

万国半导体

12V N-Channel MOSFET

General Description The AON1620 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 12V ID (at VGS=4.

文件：242 Kbytes 页数：5 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

General Description The AON1634 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 30V ID (at V

文件：222.71 Kbytes 页数：5 Pages

AOSMD

万国半导体

60V N-Channel MOSFET

General Description The AON2260 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary

文件：237.39 Kbytes 页数：5 Pages

AOSMD

万国半导体

100V N-Channel MOSFET

General Description The AON2290 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 100V ID (at VGS=1

文件：227.61 Kbytes 页数：5 Pages

AOSMD

万国半导体