ATP302

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1=10mΩ(typ.) •4.5Vdrive •InputcapacitanceCiss=5400pF(typ.) •Halogenfreecompliance

ATP302

P-ChannelPowerMOSFET

P-ChannelPowerMOSFET –60V,–70A,13mΩ,ATPAK Features •ON-resistanceRDS(on)1=10mΩ(typ.) •4.5Vdrive •InputcapacitanceCiss=5400pF(typ.) •Halogenfreecompliance

ATP302

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-70A@TC=25℃ ·DrainSourceVoltage :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=19.5mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordri

ATP302-TL-H

P-ChannelPowerMOSFET

P-ChannelPowerMOSFET –60V,–70A,13mΩ,ATPAK Features •ON-resistanceRDS(on)1=10mΩ(typ.) •4.5Vdrive •InputcapacitanceCiss=5400pF(typ.) •Halogenfreecompliance

ATP302-TL-H

General-PurposeSwitchingDeviceApplications

AUMSCD302H

SchottkyBarrierDiode

AVN302N

Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

B302

BLOCKTYPEAUTOMOTIVEPECTIFIER

B302N

30.0AmpereHeatsinkBlockAutomotiveRectifierDiodes

B302N

30AmpereStandardTypeNegativeBlockRectifierDiodesforMitsubishiAlternator