Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swit

文件：119.06 Kbytes 页数：4 Pages

AOSMD

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Dual N-Channel Enhancement Mode MOSFET

Application Battery protection « Battery Powered Systems « Power management | « Motor Control « Portable Power Adaptors ~~

文件：3.15888 Mbytes 页数：5 Pages

TECHPUBLIC

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High-Performance Notebook PWM Controller

文件：475.23 Kbytes 页数：24 Pages

ANPEC

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High-Performance Notebook PWM Controller

文件：475.23 Kbytes 页数：24 Pages

ANPEC

茂达电子