AO6810

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6810usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6810isPb-free(meetsROHS&Sony259specifications). Features VDS(V)=30V

AO6810

Dual N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=3.5A(VGS=10V) ●RDS(ON)

AO6810

MOSFET：Dual-Channel;

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

AO6810

30V Dual N-Channel MOSFET

AO6810-HF

Dual N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=3.5A(VGS=10V) ●RDS(ON)

AO6810_11

30V Dual N-Channel MOSFET