AO4918

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4918usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDC-DCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchronous

AO4918

丝印：4918；Package：SOP-8；Dual N-Channel MOSFET

■Features N-Channel1 ●VDS(V)=30V ●ID=9.3A(VGS=10V) ●RDS(ON)

AO4918

MOSFET：Dual-Channel;

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

AO4918A

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4918AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDCDCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchronous

AO4918AL

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4918AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDCDCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchronous

AO4918L

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4918usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDC-DCconverters.ASchottkydiodeisco-packagedinparallelwiththesynchronous

AO4918A

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor;