丝印：4826；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 6.3A (VGS = 10V) ● RDS(ON)

文件：1.74627 Mbytes 页数：4 Pages

KEXIN

科信电子

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4826 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4826 is Pb-free (meets ROHS & Sony 259 specifications). AO4826L is a Green Product order

文件：111.3 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel 20V (D-S) MOSFET

文件：1.00932 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 20V (D-S) MOSFET

文件：1.00932 Mbytes 页数：9 Pages

VBSEMI

微碧半导体