P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-6.5 A (VGS =-10V) ● RDS(ON)

文件：2.81101 Mbytes 页数：5 Pages

KEXIN

科信电子

30V P-Channel MOSFET

文件：604.8 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4459 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4459 is Pb-free (meets ROHS & Sony 259 specifications). AO4459L is a Green Product orde

文件：131.039 Kbytes 页数：4 Pages

AOSMD

万国半导体

Plastic-Encapsulate MOSFETS

DESCRIPTION The BC4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.

文件：586.44 Kbytes 页数：4 Pages

GWSEMI

唯圣电子