丝印：4444；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 20 A (VGS = 10V) ● RDS(ON)

文件：1.48055 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4444 uses advanced trench technology to provide excellent RDS(ON), body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in 12V buck converters. Standard Product AO4444 is Pb-free (meets ROHS & Sony 259 s

文件：112.06 Kbytes 页数：4 Pages

AOSMD

万国半导体

80V N-Channel MOSFET

General Description The AO4444 uses advanced trench technology to provide excellent RDS(ON), body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in 12V buck converters. Standard Product AO4444 is Pb-free (meets ROHS & Sony 259 s

文件：284.68 Kbytes 页数：6 Pages

AOSMD

万国半导体

80V N-Channel MOSFET

General Description The AO4444L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general pur

文件：2.55158 Mbytes 页数：6 Pages

WHXPCB

万和兴电子