P-Channel MOSFET

■ Features ● VDS (V) =-38V ● ID =-14 A (VGS =-20V) ● RDS(ON)

文件：1.46553 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4425 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4425 is Pb-free (meets ROHS & Son

文件：112.04 Kbytes 页数：4 Pages

AOSMD

万国半导体

Simple Drive Requirement, Fast Switching Characteristic

文件：203.75 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

P-Channel Enhancement Mode MOSFET

Features • -30V/-11A, RDS(ON) = 11mΩ(typ.) @ VGS = -10V RDS(ON) = 15mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Bat

文件：119.43 Kbytes 页数：10 Pages

ANPEC

茂达电子