N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3460/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

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AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 0.65 A (VGS = 10V) ● RDS(ON)

文件：1.47518 Mbytes 页数：4 Pages

KEXIN

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N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

文件：1.00389 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 0.65 A (VGS = 10V) ● RDS(ON)

文件：1.93347 Mbytes 页数：4 Pages

KEXIN

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60V N-Channel MOSFET

文件：168.92 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET

文件：1.66899 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel MOSFET

文件：1.96583 Mbytes 页数：4 Pages

KEXIN

科信电子