N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3438 and AO3438L are eletrically identical. -RoHs Compliant -A

文件：135.4 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 3 A (VGS = 4.5V) ● RDS(ON)

文件：1.15321 Mbytes 页数：4 Pages

KEXIN

科信电子

20V N-Channel MOSFET

文件：172.91 Kbytes 页数：4 Pages

AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 3 A (VGS = 4.5V) ● RDS(ON)

文件：1.77454 Mbytes 页数：4 Pages

KEXIN

科信电子

20V N-Channel MOSFET

文件：172.91 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET

文件：1.29394 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel MOSFET

文件：1.81526 Mbytes 页数：4 Pages

KEXIN

科信电子