N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3434 is Pb-free (meets ROHS & Sony 259 specifications). Features

文件：175.44 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 4.2 A (VGS = 10V) ● RDS(ON)

文件：1.27436 Mbytes 页数：4 Pages

KEXIN

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30V N-Channel MOSFET

文件：174.19 Kbytes 页数：4 Pages

AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 4 A (VGS = 10V) ● RDS(ON)

文件：1.79008 Mbytes 页数：4 Pages

KEXIN

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30V N-Channel MOSFET

General Description The AO3434A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 30V ID (at VGS=10

文件：285.5 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 4 A (VGS = 10V) ● RDS(ON)

文件：1.96162 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 4.2 A (VGS = 10V) ● RDS(ON)

文件：1.46605 Mbytes 页数：4 Pages

KEXIN

科信电子

30V N-Channel MOSFET

文件：174.19 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET

文件：1.42744 Mbytes 页数：4 Pages

KEXIN

科信电子