P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-5 A (VGS =-4.5V) ● RDS(ON)

文件：1.75721 Mbytes 页数：4 Pages

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丝印：XFDX；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE Excellent RDS(ON), low gate charge,low gate voltages

文件：593.91 Kbytes 页数：3 Pages

UMW

友台半导体

P-Channel 20-V (D-S) MOSFET

文件：1.02311 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

20V P-Channel MOSFET

文件：325.4 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-5 A (VGS =-4.5V) ● RDS(ON)

文件：2.04064 Mbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3415AL uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. - RoHS Compliant - Halogen Free Product Summary Parameter VDS

文件：268.82 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-4A (VGS =-4.5V) ● RDS(ON)

文件：1.6942 Mbytes 页数：4 Pages

KEXIN

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P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-4A (VGS =-4.5V) ● RDS(ON)

文件：2.02455 Mbytes 页数：4 Pages

KEXIN

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20V P-Channel MOSFET

文件：325.4 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel MOSFET

文件：1.72172 Mbytes 页数：4 Pages

KEXIN

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