丝印：AETL；Package：SOT-23；N-Channel Enhancement MOSFET

Features VDS (V) = 20V ID = 4.2A (VGS=4.5V) RDS(ON)

文件：2.44954 Mbytes 页数：5 Pages

UMW

友台半导体

N-Channel MOSFET

Features ● VDS (V) = 20V ● ID = 4.2A (VGS=4.5V) ● RDS(ON)

文件：1.265 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3414 is Pb-free (meets ROHS & Sony 259 spec

文件：113.15 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-Channel AlphaMOS

文件：310.85 Kbytes 页数：5 Pages

AOSMD

万国半导体