PACKAGE MARKING DESCRIPTION

PACKAGE MARKING DESCRIPTION

文件：110.87 Kbytes 页数：1 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

[Alpha & Omega Semiconductor, Ltd.] General Description The AO3410 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V and as high as 12V. This device is suitable for use as a load switch or in PWM applications. Featu

文件：165.31 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON)

文件：719.51 Kbytes 页数：2 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3410 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V and as high as 12V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 30V ID = 5.8 A

文件：396.34 Kbytes 页数：2 Pages

KERSEMI

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

MOSFET

MTW

美台微

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON)

文件：1.00918 Mbytes 页数：2 Pages

KEXIN

科信电子

PACKAGE MARKING DESCRIPTION

PACKAGE MARKING DESCRIPTION

文件：110.87 Kbytes 页数：1 Pages

AOSMD

万国半导体

N-Channel MOSFET

文件：580.67 Kbytes 页数：2 Pages

KEXIN

科信电子

N-Channel MOSFET

文件：1.0479 Mbytes 页数：2 Pages

KEXIN

科信电子